Heavy Ion Single Event Effects in CMOS Image Sensors: SET and SEU

High-energy particles in space often induce single event effects CMOS image sensors, resulting performance degradation and functional failure. This paper focuses on the formation morphology of transient bright spots sensors analyzes process by conducting heavy ion irradiation experiments to obtain variation law with linear energy transfer values background gray values; addition, we classify upset that occurred according state extract characteristics different upsets. The failure mechanisms upsets are analyzed their combined information given spots. provides an essential reference for rapidly evaluating reinforcement design sensors.